XN4501 - Panasonic Semiconductor

XN4501 Silicon NPN epitaxial planer transistor

Composite Transistors XN4501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD601A .

Features

+0.1 +0.1 1 Composite Transistors PT — Ta 500 60 Ta=25˚C IB=160µA XN4501 IC — VCE 1200 VCE=10V Ta=25˚C 1000 IB — VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µA 600 200 400 100 200 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — VBE 240 VCE=10V 200 IC — I B 240 VCE=10V Ta=25˚C 200 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB.