XN121F - Panasonic Semiconductor

XN121F Silicon NPN epitaxial planer transistor

Composite Transistors XN121F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 .

Features

1 Composite Transistors PT — Ta 500 XN121F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 240 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=10V 200 30 10 3 1 0.3 25˚C 0.1 0.03 0.01 0.1 Ta=75˚C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75˚C 80 25˚C
  –25˚C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12
  –25˚C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage V.