Composite Transistors XN1212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 .
1
Composite Transistors
PT — Ta
500
XN1212
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
160
VCE(sat) — IC
100
hFE — IC
IC/IB=10 400 VCE=10V
Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA
Collector to emitter saturation voltage VCE(sat) (V)
30 10 3 1 0.3 0.1
–25˚C 0.03 0.01 0.1
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA
Forward current transfer ratio hFE
Collector current IC (mA)
300
Ta=75˚C
200 25˚C
–25˚C
0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA
25˚C
Ta=75˚C
100
0.1mA
0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000
Collector to emitter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XN1210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
2 | XN1211 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
3 | XN1213 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
4 | XN1214 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
5 | XN1215 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
6 | XN1216 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
7 | XN1217 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
8 | XN121E |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
9 | XN121F |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
10 | XN121M |
Panasonic Semiconductor |
NPN epitaxial planer transistor | |
11 | XN1202 |
ETC |
High Performance Current Mode PWM Switching Power Supply Controller | |
12 | XN1202 |
Innuovo |
High Performance Current Mode PWM Switching Power Supply Controller |