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Composite Transistors XN1214 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 .
1
Composite Transistors
PT — Ta
500
XN1214
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
160 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400
hFE — IC
VCE=10V
30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C
IB=1.0mA
Collector current IC (mA)
120 100 80 60 40 20 0 0 2 4 6 8
0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
Forward current transfer ratio hFE
140
350 300 250 200 25˚C 150
–25˚C 100 50 0
Ta=75˚C
0.2mA
0.1mA 10 12
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
10.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | XN1210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 2 | XN1211 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 3 | XN1212 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 4 | XN1213 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 5 | XN1215 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 6 | XN1216 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 7 | XN1217 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 8 | XN121E |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 9 | XN121F |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 10 | XN121M |
Panasonic Semiconductor |
NPN epitaxial planer transistor |
|
| 11 | XN1202 |
ETC |
High Performance Current Mode PWM Switching Power Supply Controller |
|
| 12 | XN1202 |
Innuovo |
High Performance Current Mode PWM Switching Power Supply Controller |
|