XN111F - Panasonic Semiconductor

XN111F Silicon PNP epitaxial planer transistor

Composite Transistors XN111F Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 .

Features

1 Composite Transistors PT — Ta 500 XN111F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE
  –240
  –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE — IC VCE=
  –10V
  –200 Collector current IC (mA)
  –160 IB=
  –1.0mA
  –0.9mA
  –0.8mA
  –0.7mA
  –0.6mA
  –30
  –10
  –3
  –1 Ta=75˚C
  –0.3 25˚C
  –0.1
  –0.03 Forward current transfer ratio hFE 120 Ta=75˚C 25˚C 80
  –25˚C
  –120
  –0.5mA
  –80
  –0.4mA
  –0.3mA
  –40
  –0.2mA
  –0.1mA 0
  –2
  –4
  –6
  –8
  –10
  –12 40
  –25˚C 0
  –0.01
  –0.1
  –0.3
  –1
  –3
  –10
  –30
  –100 0
  –1
  –3
  –1.