Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 .
1
Composite Transistors
PT — Ta
500
XN1111
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–160
–140 IB=
–1.0mA Ta=25˚C
–100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE — IC
160 VCE=
–10V Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1
–0.3 Ta=75˚C
Collector current IC (mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA 0 0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio hFE
25˚C 120
–25˚C 80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XN1110 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
2 | XN1112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
3 | XN1113 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
4 | XN1114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
5 | XN1115 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
6 | XN1116 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
7 | XN1117 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
8 | XN1118 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
9 | XN1119 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
10 | XN111F |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
11 | XN111H |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
12 | XN111M |
Panasonic Semiconductor |
PNP epitaxial planer transistor |