XB0ASB03A1BR - Torex Semiconductor

XB0ASB03A1BR Schottky Barrier Diode

Small package, SOD-323 Suitable for compact, low profile circuit designs Low Forward Voltage (@IF=500mA, Actual VF=400mV) Short reverse recovery time (Actual trr=10ns) PACKAGING INFORMATION 0.3± 0.15 1.25 ± 0.15 0.11 +0.03 -0.02 2 0-0.1 2 MARKING RULE 0 (Product Number) Assembly Lot Number . 2 1 0.9± 0.15 1.75 ± 0.15 . 1 : Cathode 2 : Anode Unit : m.

Features

LECTRICAL CHARACTERISTICS PARAMETER Forward Voltage (DC) Reverse Current (DC) Inter-Terminal Capacity Reverse Recovery Time
*2 SYMBOL VF1 VF2 IR Ct trr TEST CONDITIONS IF=100mA IF=500mA VR=20V VR=10V, f=1MHz IF=IR=10mA, irr=1mA 12 10 LIMITS MIN. TYP. 0.4 MAX. 0.36 0.46 100 2.5± 0.15 1 Ta=25 UNITS V V A pF ns Note) 1. This product has a weakness for an electroshock such as electrostatic. Please be careful of an electrification to human body and an electric leakage in the application. 2.
*2 : trr measurement circuit Bias IF trr t 0 A irr IR Pulse Generatrix Oscilloscope 1617 XB0ASB03.