XB1009-BD - Mimix Broadband

XB1009-BD GaAs MMIC Buffer Amplifier

Mimix Broadband’s three stage 14.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +22.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to prot.

Features

Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 14.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +22.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to pro.