XB1006 - Mimix Broadband

XB1006 GaAs MMIC Buffer Amplifier

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 120 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table 5 MTTF Table 5 (5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperatu.

Features

High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon elec.