WS27C010L-20CMB - STMicroelectronics

WS27C010L-20CMB Military 128K x 8 CMOS EPROM

The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting i.

Features

• High Performance CMOS — 90 ns Access Time
• DESC SMD No. 5962-89614
• Compatible with JEDEC 27010 and 27C010 EPROMs
• Fast Programming
• EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts
• JEDEC Standard Pin Configuration — 32 Pin CERDIP Package — 32 Pin Leadless Chip Carrier (CLLCC) GENERAL DESCRIPTION The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 .