The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting i.
• High Performance CMOS
— 90 ns Access Time
• DESC SMD No. 5962-89614
• Compatible with JEDEC 27010 and
27C010 EPROMs
• Fast Programming
• EPI Processing
— Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts
• JEDEC Standard Pin Configuration
— 32 Pin CERDIP Package — 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION
The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at data access times as fast as 120 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WS27C010L-17CMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
2 | WS27C010L-12CMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
3 | WS27C010L-12DMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
4 | WS27C010L-15CMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
5 | WS27C010L-15DMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
6 | WS27C010L-20CMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
7 | WS27C010L-20DMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
8 | WS27C010L |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
9 | WS27C256L |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
10 | WS27C256L-12 |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
11 | WS27C256L-12CMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
12 | WS27C256L-12DMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM |