WS27C256L - STMicroelectronics

WS27C256L Military 32K x 8 CMOS EPROM

The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power devi.

Features

• High Performance CMOS — 120 ns Access Time
• Ceramic Leadless Chip Carrier (CLLCC)
• EPI Processing — Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts
• Fast Programming
• DESC SMD No. 5962-86063
• 300 Mil DIP or Standard 600 Mil DIP
• JEDEC Standard Pin Configuration GENERAL DESCRIPTION The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's pat.