This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M(
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V
o o
600 600 ± 30 12 7.6 48 190 1.52 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
November .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W12NC60 |
STMicroelectronics |
STW12NC60 | |
2 | W12NK60Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | W12NK80Z |
STMicroelectronics |
STW12NK80Z | |
4 | W12NK90Z |
STMicroelectronics |
STW12NK90Z | |
5 | W12NK95Z |
STMicroelectronics |
STW12NK95Z | |
6 | W1206 |
TT electronics |
Precision Thin Film Chip Resistors | |
7 | W121CEC180 |
IXYS |
Rectifier Diode | |
8 | W121CEC220 |
IXYS |
Rectifier Diode | |
9 | W1263YC160 |
IXYS |
Rectifier Diode | |
10 | W1263YC180 |
IXYS |
Rectifier Diode | |
11 | W1263YC200 |
IXYS |
Rectifier Diode | |
12 | W1263YC220 |
IXYS |
Rectifier Diode |