The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutiona.
Type STW12NK90Z
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VDSS 900V
RDS(on) <0.88Ω
ID 11A
pW 230W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W12NK95Z |
STMicroelectronics |
STW12NK95Z | |
2 | W12NK60Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | W12NK80Z |
STMicroelectronics |
STW12NK80Z | |
4 | W12NA60 |
STMicroelectronics |
STW12NA60 | |
5 | W12NC60 |
STMicroelectronics |
STW12NC60 | |
6 | W1206 |
TT electronics |
Precision Thin Film Chip Resistors | |
7 | W121CEC180 |
IXYS |
Rectifier Diode | |
8 | W121CEC220 |
IXYS |
Rectifier Diode | |
9 | W1263YC160 |
IXYS |
Rectifier Diode | |
10 | W1263YC180 |
IXYS |
Rectifier Diode | |
11 | W1263YC200 |
IXYS |
Rectifier Diode | |
12 | W1263YC220 |
IXYS |
Rectifier Diode |