VT4060C-E3 - Vishay

VT4060C-E3 Dual Trench MOS Barrier Schottky Rectifier

www.vishay.com VT4060C-E3, VIT4060C-E3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TO-220AB TMBS ® TO-262AA K VT4060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VIT4060C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High e.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 60 V 240 A 0.48 V 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Cas.