VT4045BP - Vishay

VT4045BP Trench MOS Barrier Schottky Rectifier

VT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS® TO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoH.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2011/65/EU
• Halogen-free according to IEC 61249-2-21 definition 2 1 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 1 PIN 2 CASE MECHANICAL DATA PRIMARY CHARACTERISTCS IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.51 V 150 °C 200 °C Case: TO-220AC Molding compound.