VT4045BP-M3 - Vishay

VT4045BP-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VT4045BP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS® TO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material cat.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PIN 1 PIN 2 2 1 CASE PRIMARY CHARACTERISTICS IF(DC) 40 A VRRM IFSM VF at IF = 40 A 45 V 240 A 0.51 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) Package 200 °C TO-220AC Diode variation Common cathode TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without rever.