www.DataSheet.co.kr New Product VT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B1.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
2 VT3080C
PIN 1 PIN 3 PIN 2 CASE
3 1 VIT3080C
PIN 1 PIN 3
2
3
1
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PIN 2 K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reserve battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
2 | VT3080S |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
3 | VT3080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VT300 |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
5 | VT300CT |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
6 | VT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VT3045C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VT3045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VT3045CHM3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VT3060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |