New Product VT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to Ro.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
2 3
• Halogen-free according to IEC 61249-2-21 definition
VT3045CBP
PIN 1 PIN 3
1
PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.39 V 150 °C
MECHANICAL DATA
Case: TO-220AB .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VT3045C |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VT3045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VT3045CHM3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VT300 |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
6 | VT300CT |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
7 | VT3060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VT3060C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |