New Product VT3045C, VIT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS TO-220AB ® • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualifi.
TMBS
TO-220AB
®
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
K
2
VT3045C
PIN 1 PIN 3
3 1
VIT3045C
PIN 1 PIN 3
2
3
• Halogen-free according to IEC 61249-2-21 definition
1
PIN 2 CASE
PIN 2 K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VT3045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VT3045CHM3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VT300 |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
6 | VT300CT |
PerkinElmer Optoelectronics |
Photoconductive Cells and Analog Optoisolators | |
7 | VT3060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VT3060C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VT3060G |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VT3080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |