Features N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® ⅡTechnology 100% Avalanche Tested Pb-free lead plating;RoHS compliant VSO009N10MS 100V/15A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 100 V 6.6 mΩ 8.8 mΩ 15 A SOP8 Part ID VSO009N10MS Pack.
N-Channel,5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® ⅡTechnology
100% Avalanche Tested
Pb-free lead plating;RoHS compliant
VSO009N10MS
100V/15A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
100 V 6.6 mΩ 8.8 mΩ 15 A
SOP8
Part ID VSO009N10MS
Package Type SOP8
Marking 009N10M
Tape and reel information
3000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO009N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSO009N06MSC-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO008N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |