Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VSO009N06MS-G 60V/15A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 8 mΩ 14 mΩ 15 A SOP8 Part ID VSO009N06MS-G Package Type SOP8 Marking 009N06MG .
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Ⅱ Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSO009N06MS-G
60V/15A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
60
V
8 mΩ
14 mΩ
15
A
SOP8
Part ID VSO009N06MS-G
Package Type SOP8
Marking 009N06MG
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO009N06MSC-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSO009N10MS |
Vanguard Semiconductor |
100V/15A N-Channel Advanced Power MOSFET | |
3 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO008N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |