Features N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS compliant VSO008N03MS 30V/20A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 30 V 5.0 mΩ 6.0 mΩ 20 A SOP8 Part ID VSO008N03MS Package Type SOP8 Marking 008N03M Tape and reel informat.
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
VSO008N03MS
30V/20A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
30 V 5.0 mΩ 6.0 mΩ 20 A
SOP8
Part ID VSO008N03MS
Package Type SOP8
Marking 008N03M
Tape and reel information 3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO008N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSO008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSO008P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
8 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO009N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO009N06MSC-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |