VSMY7850X01 - Vishay Siliconix

VSMY7850X01 High Power Infrared Emitting Diode

VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A. APPLICATIONS • Infrared illumination for CMOS cameras (CCTV) • Driver assis.

Features

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• Package type: surface mount Package form: Little Star® Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength:
p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity:  = ± 60° Low forward voltage Designed for high drive currents: up to 1 A DC and up to 4 A pulses Low thermal resistance: RthJP = 10 K/W Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21783 DESCRIPTION VSMY7850X01 is an infrared, .