As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Miniature light barrier • Photointerrupters •.
• Package type: surface-mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2500X01 series
• Floor life: 4 weeks, MSL 2a, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
COMPONENT VSMY2850RG VSMY2850G
Ie (mW/sr) 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSMY2850RG |
Vishay Siliconix |
High Speed Infrared Emitting Diodes | |
2 | VSMY2853G |
Vishay |
High Speed Infrared Emitting Diodes | |
3 | VSMY2853RG |
Vishay |
High Speed Infrared Emitting Diodes | |
4 | VSMY1850 |
Vishay Siliconix |
High Speed Infrared Emitting Diodes | |
5 | VSMY1940ITX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
6 | VSMY3850 |
Vishay Siliconix |
High Speed Infrared Emitting Diode | |
7 | VSMY3890X01 |
Vishay |
High Speed Infrared Emitting Diode | |
8 | VSMY3940X01 |
Vishay |
High Speed Infrared Emitting Diode | |
9 | VSMY4850X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
10 | VSMY5850X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
11 | VSMY7850X01 |
Vishay Siliconix |
High Power Infrared Emitting Diode | |
12 | VSMY7852X01 |
Vishay Siliconix |
High Power Infrared Emitting Diode |