As part of the portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • Miniature light barr.
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
22689
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SurfLightTM
DESCRIPTION
As part of the portfolio, the VSMY28.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSMY2853G |
Vishay |
High Speed Infrared Emitting Diodes | |
2 | VSMY2850G |
Vishay Siliconix |
High Speed Infrared Emitting Diodes | |
3 | VSMY2850RG |
Vishay Siliconix |
High Speed Infrared Emitting Diodes | |
4 | VSMY1850 |
Vishay Siliconix |
High Speed Infrared Emitting Diodes | |
5 | VSMY1940ITX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
6 | VSMY3850 |
Vishay Siliconix |
High Speed Infrared Emitting Diode | |
7 | VSMY3890X01 |
Vishay |
High Speed Infrared Emitting Diode | |
8 | VSMY3940X01 |
Vishay |
High Speed Infrared Emitting Diode | |
9 | VSMY4850X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
10 | VSMY5850X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
11 | VSMY7850X01 |
Vishay Siliconix |
High Power Infrared Emitting Diode | |
12 | VSMY7852X01 |
Vishay Siliconix |
High Power Infrared Emitting Diode |