VSMB294008 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft enc.
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength:
p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 7°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor lif.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSMB294008RG |
Vishay |
High Speed Infrared Emitting Diodes | |
2 | VSMB2943GX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
3 | VSMB2943RGX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
4 | VSMB2943SLX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
5 | VSMB2948G |
Vishay |
High Speed Infrared Emitting Diodes | |
6 | VSMB2948RG |
Vishay |
High Speed Infrared Emitting Diodes | |
7 | VSMB2948SL |
Vishay |
High Speed Infrared Emitting Diodes | |
8 | VSMB2000X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
9 | VSMB2020X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
10 | VSMB10940 |
Vishay |
High Speed Infrared Emitting Diode | |
11 | VSMB14940 |
Vishay |
High Speed Infrared Emitting Diodes | |
12 | VSM002NE4MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |