VSMB2000X01 series are infrared, 940 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft encode.
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength:
p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD20.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSMB2000X01 |
Vishay |
High Speed Infrared Emitting Diodes | |
2 | VSMB294008G |
Vishay |
High Speed Infrared Emitting Diodes | |
3 | VSMB294008RG |
Vishay |
High Speed Infrared Emitting Diodes | |
4 | VSMB2943GX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
5 | VSMB2943RGX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
6 | VSMB2943SLX01 |
Vishay |
High Speed Infrared Emitting Diodes | |
7 | VSMB2948G |
Vishay |
High Speed Infrared Emitting Diodes | |
8 | VSMB2948RG |
Vishay |
High Speed Infrared Emitting Diodes | |
9 | VSMB2948SL |
Vishay |
High Speed Infrared Emitting Diodes | |
10 | VSMB10940 |
Vishay |
High Speed Infrared Emitting Diode | |
11 | VSMB14940 |
Vishay |
High Speed Infrared Emitting Diodes | |
12 | VSM002NE4MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |