Features N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 10 mΩ 14.5 mΩ 40 A PDFN3333 Part ID VS5812AE Package T.
N-Channel,5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VS5812AE
55V/40A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
55 V 10 mΩ 14.5 mΩ 40 A
PDFN3333
Part ID VS5812AE
Package Type PDFN3333
Marking 5812AE
Tape and reel information
5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS5812AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VS5812AI |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VS5812AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VS5812AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VS5810AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VS5814AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VS5814DS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VS5804AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VS5804AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VS5804AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VS5804BS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VS5806AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |