VS5812AD - Vanguard Semiconductor

VS5812AD N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS5812AD 55V/50A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 9.5 mΩ 13.5 mΩ 50 A TO-252 Part ID VS5812AD Package .

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Technology
 100% Avalanche Tested
 Pb-free lead plating; RoHS compliant VS5812AD 55V/50A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 9.5 mΩ 13.5 mΩ 50 A TO-252 Part ID VS5812AD Package Type TO-252 Marking 5812AD Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain curr.