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VS5812AE |
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| Part Number | VS5812AE |
| Manufacturer | Vanguard Semiconductor |
| Description | Features N-Channel，5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VS5812AE... |
| Features |
N-Channel，5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VS5812AE 55V/40A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 55 V 10 mΩ 14.5 mΩ 40 A PDFN3333 Part ID VS5812AE Package Type PDFN3333 Marking 5812AE Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain curr... |
| Document |
 VS5812AE Data Sheet
PDF 376.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VS5812AD |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 2 | VS5812AI |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 3 | VS5812AP |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 4 | VS5812AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 5 | VS5810AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|