VN1710L - Siliconix

VN1710L N-Channel Enhancement-Mode MOS Transistors

~Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.0. ) (A) PACKAGE VN1710L 170 10 0.17 TO-92 VN171 OM 170 10 0.19 TO-237 Performance Curves: VNDB24 (See Section 7) VN1710 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN .

Features

mum junction temperature 6-85 VN1710 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~:6~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OSS VaS(th) lass loss 10(ON) rOS(ON) gFS gos C lss Coss Crss td(ON) t, t d(OFF) t, TEST CONDITIONS Vas = 0 V, 10 = 100.l1A Vos = Vas, 10 = 1 rnA Vos = 0 V Vas =±15 V I TJ.