VN1706L - Siliconix

VN1706L N-Channel Enhancement-Mode MOS Transistors

.wLIrISinilciccrpocrnatiexc VN1706L, VN1706M N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (!l ) (A) PACKAGE VN1706L 170 6 0.22 TO-92 VN1706M 170 6 0.25 TO-237 Performance Curves: VNDB24 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN .

Features

unction temperature 6-83 VN1706L, VN1706M ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~:6~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)DSS VGS(th) IGSS IDSS 10(ON) rDS(ON) gFS gos C lss Coss C rss td(ON) tr t d(OFF) tf TEST CONDITIONS V GS =OV.I D =100J.lA V DS = VGs. 10 = 1 mA VDS = 0 V VGS =±15 V VDS = 12.