VN1706D - Siliconix

VN1706D N-Channel Enhancement-Mode MOS Transistors

.tLlCIITiSnciolircpoornatiexd PRODUCT SUMMARY PART V(BR)DSS rDS(ON) ID NUMBER (V) (il) (A) PACKAGE VN1706B 170 6 0.63 TO-205AD VN1706D 170 6 1.12 TO-220 Performance Curves: VNDB24 (See Section 7) VN1706B, VN1706D N-Channel Enhancement-Mode MOS Transistors TO-20SAD (TO-39) BOTTOM VIEW TO-220 1 SOURCE 2 GATE 3 DRAIN & CASE TOP VIEW o 1 GAT.

Features

width limited by maximum junction temperature 6-S1 VN1706B, VN1706D ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~:~~ndu~tance3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OSS VGS(lh) IGSS loss 10(ON) rOS(ON) gFS gos C lss Coss Crss td(ON) t, t d(OFF) tl TEST CONDITIONS VGs=OV,10=100,ll.A Vos = VGS, 10 = 1 mA VOS = 0 .