The VN16BSP is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to V.
j T s tg Parameter Drain-Source Breakdown Voltage Output Current (cont.) at T c = 85 o C o Value 40 20 20 Unit V A A A mA V mA V W o o I OUT (RMS) RMS Output Current at Tc = 85 C Reverse Output Current at T c = 85 C (f > 1Hz) Input Current Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c = 25 C Junction Operating Temperature Storage Temperature o o -20 ± 10 -4 ± 10 2000 82 -40 to 150 -55 to 150 C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VN16BSP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-cas.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN16B |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VN16118 |
Vaishali Semiconductor |
Gigabit Ethernet Transceiver | |
3 | VN16218 |
Vaishali Semiconductor |
2.5 Gigabit SERDES Transceiver | |
4 | VN100D |
Siliconix |
(VN1xxD) MOSPOWER | |
5 | VN100x |
Siliconix |
(VN1xxD) MOSPOWER | |
6 | VN1015 |
Cherry |
MAGNETIC SENSOR | |
7 | VN10K |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
8 | VN10K |
Microchip |
N-Channel Vertical DMOS FET | |
9 | VN10K |
TT |
N-Channel MOSFET | |
10 | VN10K-TO18 |
Seme LAB |
N-Channel MOSFET | |
11 | VN10KE |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
12 | VN10KE |
Vishay Telefunken |
N-Channel Enhancement-Mode MOS Transistors |