VN10KE - Siliconix

VN10KE N-Channel Enhancement-Mode MOS Transistors

~Siliconix .,1;11 incorporated VN0610L, VN10KE, VN10KM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE TO-206AC (TO-52) BOTTOM VIEW VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-206AC VN10KM 60 5 0.31 TO-237 Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1.

Features

internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l1A Vos = VGS, 10 = 1 mA Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~~:6~nductance 3 Common Source Output Conductance3 IGSS loss 10(ON) rOS(ON) gFS gos Vos = 0 V, VGS = 15 V VOS = 48 V VGS = 0 V I T = 125°C VOS = 10 V, VGS = 10 V Vas = 5 V, 10 = 0.2 A VGS = 10 V 10=0.5A I TJ = 12.