uThe VN16B is a monolithic device made using dSTMicroelectronics VIPower Technology, rointended for driving resistive or inductive loads Pwith one side grounded. teBuilt-in thermal shut-down protects the chip from over temperature and short circuit. leThe open drain diagnostic output indicates: open soload in off state and in on s.
Figure 1. Package
Type
VDSS RDS(on)
In(1)
VCC
VN16B
40 V 0.06 Ω 5.6 A 26 V
)Note: 1. Nominal current according to ISO definition for high side t(sautomotive switch. The Nominal Current is the current at
Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V
duc
■ MAXIMUM CONTINUOUS OUTPUT roCURRENT (note 2): 20 A @ Tc= 85°C P
■ 5V LOGIC LEVEL COMPATIBLE INPUT te
■ THERMAL SHUT-DOWN le
■ UNDER VOLTAGE PROTECTION so
■ OPEN DRAIN DIAGNOSTIC OUTPUT b
■ INDUCTIVE LOAD FAST DEMAGNETIZATION - O
■ VERY LOW STAND-BY POWER )DISSIPATION
ct(sDESCRIPTION uThe VN16B is a monolithic .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN16118 |
Vaishali Semiconductor |
Gigabit Ethernet Transceiver | |
2 | VN16218 |
Vaishali Semiconductor |
2.5 Gigabit SERDES Transceiver | |
3 | VN16BSP |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
4 | VN100D |
Siliconix |
(VN1xxD) MOSPOWER | |
5 | VN100x |
Siliconix |
(VN1xxD) MOSPOWER | |
6 | VN1015 |
Cherry |
MAGNETIC SENSOR | |
7 | VN10K |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
8 | VN10K |
Microchip |
N-Channel Vertical DMOS FET | |
9 | VN10K |
TT |
N-Channel MOSFET | |
10 | VN10K-TO18 |
Seme LAB |
N-Channel MOSFET | |
11 | VN10KE |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
12 | VN10KE |
Vishay Telefunken |
N-Channel Enhancement-Mode MOS Transistors |