VN1206L - Siliconix

VN1206L N-Channel MOSFET

...zr:S. iliconix incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (n) (A) PACKAGE VN1206L 120 6 0.23 TO-92 VN1206M 120 6 0.26 TO-237 Performance Curves: VNDQ12 (See Section 7) VN1206L, VN1206M N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 & TA.

Features

d by maximum junction temperature 6-77 VN1206L, VN1206M ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~~:~~nductance3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL V(BR)OSS VGS(th) IGSS loss 10(ON) rOS(ON) gFS gos Clss Coss C rss TEST CONDITIONS VGS = 0 V, 10 = 100.l1A Vos = VGS, 10 = 1 mA Vos = 0 V VGS =±15 V Vos = 120 V VGS = 0 V I TJ = 125°C I TJ = 125°C VOS.