VN1210L - Siliconix

VN1210L N-Channel Enhancement-Mode MOS Transistors

fCrSiliconix ~ incorporated VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN1210L 120 10 0.18 TO-92 VN1210M 120 10 0.20 TO-237 Performance Curves: VNDQ12 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW ~ ~ 1 SOURCE 2 GATE 3 DRAI.

Features

mum junction temperature 6-79 VN1210 SERIES ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~;~~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)DSS VGS(th) IGSS I Dss ID(ON) rDS(ON) gFS gos C 1SS Coss C rss td(ON) tr t d(OFF) tf TEST CONDITIONS VGS = 0 V. ID = 100)J.A VDS = VGS , ID = 1 mA VDS = 0 V VGs =±15V I .