VN1206B - Siliconix

VN1206B N-Channel MOSFET

tlCrSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (n) (A) PACKAGE VN12068 120 6 0.59 TO-205AD VN1206D 120 6 1.19 TO-220 Performance Curves: VNDQ12 (See Section 7) VN1206B, VN1206D N-Channel Enhancement-Mode MOS Transistors TO-20SAO (TO-39) BOTTOM VIEW TO-220 1 SOURCE 2 GATE 3 DRAIN & CASE TOP VIEW o 1 GATE .

Features

imum junction temperature 2Absolute maximum ratings have been revised from previous data sheet VN1206D 6.25 UNITS °C/W 6-75 VN1206B, VN1206D ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~~:6~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)OSS VGS(th) IGSS loss 10CON) rOSCON) gFS gos C lss Coss C rss tdCON) tr tdC.