VN0610 - Supertex

VN0610 N-Channel Enhancement-Mode Vertical DMOS Power FETs

0J §upertexinc. VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVDGS 60V 60V ROS(ON) (max) 30 50 'O(ON) (min) 1.5A O.75A Order Number I Package TO-92 VN0606L VN0610LL Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Ex.

Features

D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coeffic.