VN0603T - Siliconix

VN0603T N-Channel Enhancement-Mode MOS Transistors

fCrSiliconix ~ incorporated VN0603 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (,(1) (A) PACKAGE VN0603L 60 3.5 0.30 TO-92 VN0603T 60 3.5 0.22 SOT-23 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7) SOT-23 TOP VIEW 1 DRAIN 2 SOURCE 3 GATE ABS.

Features

temperature 6-65 VN0603 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS ~ trrSinilciocrpoornatiexd LIMITS VN0603L VN0603T TYp2 MIN MAX MIN MAX UNIT STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VaS(th) Vas = 0 V, 10 = 10 llA Vos = Vas, 10 = 1 mA 70 60 60 V 2,3 0.8 3 0.8 3 Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 lass loss 10(ON) rOS(ON) ~~~~~nductance 3 gFS Common Source Output Conductance3 gos Vos = 0 V, Vas =±20 v ±1 Vos = 48 V Vas = 0 V 0.02 lT = 125°C 1 .