VN0605T - Siliconix

VN0605T N-Channel Enhancement-Mode MOS Transistor

.:rSiliconix ~ incorporated PRODUCT SUMMARY V(BR)OSS rOS(ON) 10 (V) (0) (A) 60 5 0.18 PACKAGE SOT-23 Performance Curves: VNDS06 (See Section 7) VN0605T N-Channel Enhancement-Mode MOS Transistor SOT-23 TOP VIEW 2 3 1 DRAIN 2 SOURCE 3 GATE PRODUCT MARKING I VN0605T V02 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/T.

Features

ce Breakdown Voltage Gate Thresho)d Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 SYMBOL V(BR)oSS VGS(th) IGSS loss 10(ON) roS(ON) ~~~:~gnductance 3 gFS Common Source Output Conductance3 gos DYNAMIC TEST CONDITIONS TYp2 VGs =OV,1 0 =10JJ.A Vos = VGS, 10 = 1 mA Vos = 0 V VGS =±20 V I TJ = 125°C Vos = 50 V VGS = 0 V I TJ = 125°C Vos = 10 V, VGS = 10 V VGS = 4.5 V, 10 = 50 mA VGS = 10 V 10=0.5A I TJ = 125°C Vos=10V,lo=0.2A Vos =10V,10=50mA 70 2.3 +1 ±5 0.02 1 700 4.5 3 5.5 180 500 Input Capacitance Output Capac.