VFT5200-E3 - Vishay

VFT5200-E3 Trench MOS Barrier Schottky Rectifier

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AC TMBS ® ITO-220AC VT5200 PIN 1 PIN 2 1 CASE 2 TO-263AB K VFT5200 PIN 1 PIN 2 TO-262AA K 2 1 A NC VBT5200 NC K A HEATSINK VIT5200 NC A K NC K A HEATSINK PRIMARY CHARACTERI.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power su.