The ASI VFT5-28 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and FM Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES INCLUDE: • PG = 14 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System S G C D F E D S Ø.125 NOM. FULL R J .125 I GH MAXIMUM RATINGS ID VDSS .
INCLUDE:
• PG = 14 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
S G
C D F E
D S
Ø.125 NOM. FULL R J .125
I GH
MAXIMUM RATINGS
ID VDSS VGS PDISS TJ T STG θ JC
O
1.0 A 60 V ±40 V 17.5 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 10 OC/W
O O
DIM A B C D E F G H I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ASI ORDER CODE: ASI10701
NONE
CHARA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT5-28SL |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
2 | VFT5200 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
3 | VFT5200-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VFT5202-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | VFT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VFT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VFT1045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VFT1060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT1060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VFT1080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |