VFT1060C-E3 - Vishay

VFT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A TO-220AB TMBS ® ITO-220AB VT1060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VFT1060C 123 PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K TO-262AA K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT.