www.vishay.com VT3060C, VFT3060C, VBT3060C, VIT3060C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forw.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT3060C
PIN 1
K
PIN 2
HEA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT3060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
2 | VBT3060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VBT3045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VBT3045BP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VBT3045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VBT3045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
7 | VBT3045CBP-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VBT3045CBP-M3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | VBT3080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
10 | VBT3080S |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | VBT3080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | VBT30L60C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |