VBT3045CBP - Vishay

VBT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier

www.DataSheet.co.kr New Product VBT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maxi.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT3045CBP PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.39 V 150 °C MECHANICAL DATA Cas.