VBT3045BP-M3 - Vishay

VBT3045BP-M3 Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT3045BP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-263AB K PIN 1 PIN 2 2 1 K HEATSINK FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD.

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• TJ 200 °C max. in solar bypass application
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS Package TO-263AB IF(DC) VRRM IFSM VF at IF = 30 A TOP max. (AC mode) TJ max. (DC forward current) Diode variation 30 A 45 V 200 A.