www.vishay.com VBT2080S-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VBT2080S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MS.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package
20 A 80 V 150 A 0.70 V 150 °C D2PAK (TO-263AB)
Circuit configuration
Sing.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBT2080S-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VBT2080C-E3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
3 | VBT2045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | VBT2045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VBT2045C-E3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VBT2045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier Rectifier | |
7 | VBT2060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VBT2060G |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VBT2060G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VBT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | VBT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | VBT10202C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |